Micro-Structural and Nano-Technology

Citations to U.S. patents by U.S. patents granted in 2024

Related WIPO fields:[Semiconductors | Materials, metallurgy | Optics | Measurement | Basic materials chemistry | Electrical machinery, apparatus, energy | Computer technology All WIPO fields
[Cited by Examiner | Cited by Applicant]
Most Cited by Examiners

  1. 10 10510620    Work function metal patterning for N-P space between active nanostructures
  Inventors: Daniel Chanemougame; Steven R. Soss; Steven Bentley; Julien Frougier; Ruilong Xie

  2. 5 10170638    Nanosheet substrate isolated source/drain epitaxy by dual bottom spacer
  Inventors: Alexander Reznicek

  3. 4 10192867    Complementary FETs with wrap around contacts and method of forming same
  Inventors: Julien Frougier; Ruilong Xie; Puneet Harischandra Suvarna; Hiroaki Niimi; Steven Bentley; Ali Razavieh

  3. 4 10825736    Nanosheet with selective dipole diffusion into high-k
  Inventors: Jingyun Zhang; Takashi Ando; Choonghyun Lee; Alexander Reznicek

  3. 4 10879308    Stacked nanosheet 4T2R unit cell for neuromorphic computing
  Inventors: Takashi Ando; Bahman Hekmatshoartabari; Alexander Reznicek

  3. 4 7800199    Semiconductor circuit
  Inventors: ChoonSik Oh; Sang-Yun Lee

  3. 4 9947804    Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure
  Inventors: Julien Frougier; Min Gyu Sung; Ruilong Xie; Chanro Park; Steven Bentley

  8. 3 10030186    Heat transfer medium
  Inventors: Ki CHAN

  8. 3 10109479    Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice
  Inventors: Robert J. Mears; Robert John Stephenson; Keith Doran Weeks; Nyles Wynn Cody; Marek Hytha

  8. 3 10134640    Semiconductor device structure with semiconductor wire
  Inventors: Hung-Li Chiang; I-Sheng Chen; Tzu-Chiang Chen; Chao-Ching Cheng; Chih Chieh Yeh; Yee-Chia Yeo

  8. 3 10263100    Buffer regions for blocking unwanted diffusion in nanosheet transistors
  Inventors: Zhenxing Bi; Kangguo Cheng; Juntao Li; Peng Xu

  8. 3 10343898    MEMS microphone with tunable sensitivity
  Inventors: Jien-Ming Chen; Nai-Hao Kuo; Wen-Shan Lin; Hsin-Li Lee

  8. 3 10522499    Bonded structures
  Inventors: Paul M. Enquist; Liang Wang; Rajesh Katkar; Javier A. Delacruz; Arkalgud R. Sitaram

  8. 3 10535733    Method of forming a nanosheet transistor
  Inventors: Kangguo Cheng; Choonghyun Lee; Juntao Li; Peng Xu

  8. 3 11629276    Structural adhesive compositions
  Inventors: Umesh C. Desai; Tien-Chieh Chao; Masayuki Nakajima; Kaliappa G. Ragunathan

  8. 3 4500601    Chelating polymers for modifying metal surface properties
  Inventors: David R. Whitcomb

  8. 3 5717011    Curing agent compositions and a method of making
  Inventors: Allen L. Griggs; Taun L. McKenzie

  8. 3 6122973    Electrostatic capacity-type pressure sensor with reduced variation in reference capacitance
  Inventors: Kazuo Nomura; Kiyoshi Tanaka; Satoshi Nakao; Hideki Tanigami; Kazutaka Hayashi

  8. 3 7521806    Chip spanning connection
  Inventors: John Trezza

  8. 3 8841777    Bonded structure employing metal semiconductor alloy bonding
  Inventors: Mukta G. Farooq; Zhengwen Li; Zhijiong Luo; Huilong Zhu

  8. 3 9608116    FINFETs with wrap-around silicide and method forming the same
  Inventors: Kuo-Cheng Ching; Ching-Wei Tsai; Chi-Wen Liu; Chih-Hao Wang; Ying-Keung Leung

  8. 3 9954058    Self-aligned air gap spacer for nanosheet CMOS devices
  Inventors: Shogo Mochizuki; Alexander Reznicek; Joshua M. Rubin; Junli Wang

  8. 3 9991352    Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device
  Inventors: Julien Frougier; Ali Razavieh; Ruilong Xie; Steven Bentley

[Cited by Examiner | Cited by Applicant]
Most Cited by Applicants

  1. 208 9520482    Method of cutting metal gate
  Inventors: Po-Chin Chang; Chih-Hao Wang; Kai-Chieh Yang; Shih-Ting Hung; Wei-Hao Wu; Gloria Wu; Inez Fu; Chia-Wei Su; Yi-Hsuan Hsiao

  2. 207 9236267    Cut-mask patterning process for fin-like field effect transistor (FinFET) device
  Inventors: Ho Wei De; Kuei-Liang Lu; Ming-Feng Shieh; Ching-Yu Chang

  2. 207 9576814    Method of spacer patterning to form a target integrated circuit pattern
  Inventors: Chieh-Han Wu; Cheng-Hsiung Tsai; Chung-Ju Lee; Ming-Feng Shieh; Ru-Gun Liu; Shau-Lin Shue; Tien-I Bao

  4. 145 9608116    FINFETs with wrap-around silicide and method forming the same
  Inventors: Kuo-Cheng Ching; Ching-Wei Tsai; Chi-Wen Liu; Chih-Hao Wang; Ying-Keung Leung

  5. 124 9502265    Vertical gate all around (VGAA) transistors and methods of forming the same
  Inventors: Ching-Hong Jiang; Li-Ting Wang; Teng-Chun Tsai; Shih-Chiang Chen

  6. 123 9536738    Vertical gate all around (VGAA) devices and methods of manufacturing the same
  Inventors: Yu-Lien Huang; Chun-Hsiung Lin; Chi-Wen Liu

  7. 106 9209247    Self-aligned wrapped-around structure
  Inventors: Jean-Pierre Colinge; Kuo-Cheng Ching; Ta-Pen Guo; Carlos H. Diaz

  8. 102 9412817    Silicide regions in vertical gate all around (VGAA) devices and methods of forming same
  Inventors: Kai-Chieh Yang; Wai-Yi Lien

  8. 102 9412828    Aligned gate-all-around structure
  Inventors: Kuo-Cheng Ching; Jean-Pierre Colinge; Zhiqiang Wu

  8. 102 9472618    Nanowire field effect transistor device having a replacement gate
  Inventors: Richard Kenneth Oxland

 
 
References:
Raw data from: U.S. Patent and Trademark Office. "Data Download Tables." PatentsView. Accessed October 30, 2025. https://patentsview.org/download/data-download-tables.

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Published: December 1, 2025