1. 7 10700064
Multi-threshold voltage gate-all-around field-effect transistor devices with common gates
Inventors: Jingyun Zhang; Takashi Ando; ChoongHyun Lee 1. 7 9954058
Self-aligned air gap spacer for nanosheet CMOS devices
Inventors: Shogo Mochizuki; Alexander Reznicek; Joshua M. Rubin; Junli Wang 3. 6 9997519
Dual channel structures with multiple threshold voltages
Inventors: Ruqiang Bao; Michael A. Guillorn; Vijay Narayanan 4. 5 9991352
Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device
Inventors: Julien Frougier; Ali Razavieh; Ruilong Xie; Steven Bentley 5. 4 10170638
Nanosheet substrate isolated source/drain epitaxy by dual bottom spacer
Inventors: Alexander Reznicek 5. 4 10243054
Integrating standard-gate and extended-gate nanosheet transistors on the same substrate
Inventors: Kangguo Cheng; Juntao Li; Geng Wang; Qintao Zhang 5. 4 10510620
Work function metal patterning for N-P space between active nanostructures
Inventors: Daniel Chanemougame; Steven R. Soss; Steven J. Bentley; Julien Frougier; Ruilong Xie 5. 4 11069684
Stacked field effect transistors with reduced coupling effect
Inventors: Ruilong Xie; Chun-Chen Yeh; Dechao Guo; Alexander Reznicek 5. 4 9362355
Nanosheet MOSFET with full-height air-gap spacer
Inventors: Kangguo Cheng; Bruce B. Doris; Michael A. Guillorn; Xin Miao 5. 4 9608116
FINFETs with wrap-around silicide and method forming the same
Inventors: Kuo-Cheng Ching; Ching-Wei Tsai; Chi-Wen Liu; Chih-Hao Wang; Ying-Keung Leung 5. 4 9947804
Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure
Inventors: Julien Frougier; Min Gyu Sung; Ruilong Xie; Chanro Park; Steven Bentley |