1. Weighted Score: 5.000 10510620
Work function metal patterning for N-P space between active nanostructures
Inventors: Daniel Chanemougame; Steven R. Soss; Steven Bentley; Julien Frougier; Ruilong Xie 2. Weighted Score: 3.500 10170638
Nanosheet substrate isolated source/drain epitaxy by dual bottom spacer
Inventors: Alexander Reznicek 3. Weighted Score: 3.333 10825736
Nanosheet with selective dipole diffusion into high-k
Inventors: Jingyun Zhang; Takashi Ando; Choonghyun Lee; Alexander Reznicek 4. Weighted Score: 3.000 10879308
Stacked nanosheet 4T2R unit cell for neuromorphic computing
Inventors: Takashi Ando; Bahman Hekmatshoartabari; Alexander Reznicek 4. Weighted Score: 3.000 9947804
Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure
Inventors: Julien Frougier; Min Gyu Sung; Ruilong Xie; Chanro Park; Steven Bentley 6. Weighted Score: 2.500 10030186
Heat transfer medium
Inventors: Ki CHAN 6. Weighted Score: 2.500 10263100
Buffer regions for blocking unwanted diffusion in nanosheet transistors
Inventors: Zhenxing Bi; Kangguo Cheng; Juntao Li; Peng Xu 6. Weighted Score: 2.500 9954058
Self-aligned air gap spacer for nanosheet CMOS devices
Inventors: Shogo Mochizuki; Alexander Reznicek; Joshua M. Rubin; Junli Wang 9. Weighted Score: 2.167 6122973
Electrostatic capacity-type pressure sensor with reduced variation in reference capacitance
Inventors: Kazuo Nomura; Kiyoshi Tanaka; Satoshi Nakao; Hideki Tanigami; Kazutaka Hayashi 10. Weighted Score: 2.000 10109479
Method of making a semiconductor device with a buried insulating layer formed by annealing a superlattice
Inventors: Robert J. Mears; Robert John Stephenson; Keith Doran Weeks; Nyles Wynn Cody; Marek Hytha 10. Weighted Score: 2.000 10332803
Hybrid gate-all-around (GAA) field effect transistor (FET) structure and method of forming
Inventors: Ruilong Xie; Edward J. Nowak; Bipul C. Paul; Steven R. Soss; Julien Frougier; Daniel Chanemougame; Lars Liebmann 10. Weighted Score: 2.000 10666264
3D stacked integrated circuits having failure management
Inventors: Tony M. Brewer 10. Weighted Score: 2.000 10797163
Leakage control for gate-all-around field-effect transistor devices
Inventors: Lan Yu; Heng Wu; Ruqiang Bao; Junli Wang; Dechao Guo 10. Weighted Score: 2.000 10896956
Field effect transistor with reduced contact resistance
Inventors: Remi Coquand; Shay Reboh 10. Weighted Score: 2.000 10927294
Bright silver based quaternary nanostructures
Inventors: Ashenafi Damtew Mamuye; Christopher Sunderland; Ilan Jen-La Plante; Chunming Wang; John J. Curley 10. Weighted Score: 2.000 11545963
Ring oscillator-based Ising machine system
Inventors: Kenneth M. Zick 10. Weighted Score: 2.000 11674003
Nanocomposites
Inventors: Peter D. Condo; David Scott Thompson 10. Weighted Score: 2.000 4980308
Method of making a thin film transistor
Inventors: Hisao Hayashi; Takeshi Matsushita 10. Weighted Score: 2.000 5629951
Electrostatically-controlled cantilever apparatus for continuous tuning of the resonance wavelength of a fabry-perot cavity
Inventors: Constance J. Chang-Hasnain; Edward C. Vail; Marianne S. Wu 10. Weighted Score: 2.000 6652968
Pressure activated electrically conductive material
Inventors: Dorothy H. J. Miller; Brian Miller |