Micro-Structural and Nano-Technology

Citations to U.S. patents by U.S. patents granted in 2023

Other WIPO fields: [ Computer technology  |  Digital communication  |  Electrical machinery, apparatus, energy  |  Measurement  |  Audio-visual technology  |  Medical technology  |  Optics  |  Transport  |  Semiconductors  |  Telecommunications  |  Other special machines  |  Pharmaceuticals  |  Organic fine chemistry  |  Mechanical elements  |  Chemical engineering  |  Engines, pumps, turbines  |  Civil engineering  |  Control  |  Basic materials chemistry  |  Handling  |  Furniture, games  |  Machine tools  |  Biotechnology  |  Other consumer goods  |  Macromolecular chemistry, polymers  |  IT methods for management  |  Textile and paper machines  |  Basic communication processes  |  Surface technology, coating  |  Materials, metallurgy  |  Environmental technology  |  Thermal processes and apparatus  |  Analysis of biological materials  |  Food chemistry  |  Micro-structural and nano-technology ]

  *1. 5 10236217    Stacked field-effect transistors (FETs) with shared and non-shared gates
  Inventors:  Takashi Ando; Pouya Hashemi; ChoongHyun Lee; Alexander Reznicek; Jingyun Zhang

  *1. 5 11318213    Compositions and methods for delivery of RNA
  Inventors:  Amit Khandhar; Steven Reed; Malcolm Duthie; Jesse Erasmus; Darrick Carter; Bryan J. Berube

  *1. 5 11376335    RNA-lipid nanoparticle complexes of viral RNA polymerase region and SARS-CoV-2 spike protein region
  Inventors:  Amit Khandhar; Steven Reed; Malcolm Duthie; Jesse Erasmus; Darrick Carter; Bryan J. Berube

  *1. 5 11458209    Compositions and methods for delivery of nucleic acid-lipid nanoparticle complexes encoding for viral RNA polymerase region and protein antigen
  Inventors:  Amit Khandhar; Steven Reed; Malcolm Duthie; Jesse Erasmus; Darrick Carter; Bryan J. Berube

  *1. 5 11534497    Compositions and methods for delivery of RNA
  Inventors:  Amit Khandhar; Steven Reed; Malcolm Duthie; Jesse Erasmus; Darrick Carter; Bryan J. Berube

  *1. 5 9991352    Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device
  Inventors:  Julien Frougier; Ali Razavieh; Ruilong Xie; Steven Bentley

  *7. 4 10090193    Integrated circuit structure incorporating a stacked pair of field effect transistors and a buried interconnect and method
  Inventors:  Daniel Chanemougame; Lars Liebmann; Ruilong Xie

  *7. 4 10170638    Nanosheet substrate isolated source/drain epitaxy by dual bottom spacer
  Inventors:  Alexander Reznicek

  *7. 4 10192867    Complementary FETs with wrap around contacts and method of forming same
  Inventors:  Julien Frougier; Ruilong Xie; Puneet H. Suvarna; Hiroaki Niimi; Steven J. Bentley; Ali Razavieh

  *7. 4 10256158    Insulated epitaxial structures in nanosheet complementary field effect transistors
  Inventors:  Julien Frougier; Ruilong Xie; Steven Bentley; Puneet H. Suvarna

  *7. 4 11199695    Actuator device
  Inventors:  Daiki Suzuki; Yuki Morinaga; Go Tanaka

  *7. 4 11433142    Compositions and methods for delivery of RNA-lipid nanoparticle complexes encoding for viral RNA polymerase region and protein antigen
  Inventors:  Amit Khandhar; Steven Reed; Malcolm Duthie; Jesse Erasmus; Darrick Carter; Bryan J. Berube

  *7. 4 6392220    Micromachined members coupled for relative rotation by hinges
  Inventors:  Timothy G. Slater; Armand P. Neukermans

  *7. 4 8841777    Bonded structure employing metal semiconductor alloy bonding
  Inventors:  Mukta G. Farooq; Zhengwen Li; Zhijiong Luo; Huilong Zhu

  *7. 4 9608116    FINFETs with wrap-around silicide and method forming the same
  Inventors:  Kuo-Cheng Ching; Ching-Wei Tsai; Chi-Wen Liu; Chih-Hao Wang; Ying-Keung Leung

  7. (5) 4 9947804    Methods of forming nanosheet transistor with dielectric isolation of source-drain regions and related structure
  Inventors:  Julien Frougier; Min Gyu Sung; Ruilong Xie; Chanro Park; Steven Bentley

  1. (1) 152 9236267    Cut-mask patterning process for fin-like field effect transistor (FinFET) device
  Inventors:  Ho Wei De; Kuei-Liang Lu; Ming-Feng Shieh; Ching-Yu Chang

  1. (1) 152 9576814    Method of spacer patterning to form a target integrated circuit pattern
  Inventors:  Chieh-Han Wu; Cheng-Hsiung Tsai; Chung-Ju Lee; Ming-Feng Shieh; Ru-Gun Liu; Shau-Lin Shue; Tien-I Bao

  3. (1) 151 9520482    Method of cutting metal gate
  Inventors:  Po-Chin Chang; Chih-Hao Wang; Kai-Chieh Yang; Shih-Ting Hung; Wei-Hao Wu; Gloria Wu; Inez Fu; Chia-Wei Su; Yi-Hsuan Hsiao

  4. (4) 101 9608116    FINFETs with wrap-around silicide and method forming the same
  Inventors:  Kuo-Cheng Ching; Ching-Wei Tsai; Chi-Wen Liu; Chih-Hao Wang; Ying-Keung Leung

  5. (5) 94 9502265    Vertical gate all around (VGAA) transistors and methods of forming the same
  Inventors:  Ching-Hong Jiang; Li-Ting Wang; Teng-Chun Tsai; Shih-Chiang Chen

  6. (5) 93 9536738    Vertical gate all around (VGAA) devices and methods of manufacturing the same
  Inventors:  Yu-Lien Huang; Chun-Hsiung Lin; Chi-Wen Liu

  7. (7) 79 9209247    Self-aligned wrapped-around structure
  Inventors:  Jean-Pierre Colinge; Kuo-Cheng Ching; Ta-Pen Guo; Carlos H. Diaz

  8. (8) 75 9412817    Silicide regions in vertical gate all around (VGAA) devices and methods of forming same
  Inventors:  Kai-Chieh Yang; Wai-Yi Lien

  8. (10) 75 9412828    Aligned gate-all-around structure
  Inventors:  Kuo-Cheng Ching; Jean-Pierre Colinge; Zhiqiang Wu

  10. (8) 74 9472618    Nanowire field effect transistor device having a replacement gate
  Inventors:  Richard Kenneth Oxland

Advanced Transistor Architectures: continued miniaturization and performance enhancement.

• US Patent No. 10236217 ("Stacked field-effect transistors (FETs) with shared and non-shared gates") by Ando et al. and US Patent No. 9991352 ("Methods of forming a nano-sheet transistor device with a thicker gate stack and the resulting device") by Frougier et al. highlight the ongoing pursuit of beyond-CMOS technologies, such as 3D transistor architectures and nanosheet transistors, to overcome the limitations of traditional silicon-based devices.


• US Patent No. 9236267 ("Cut-mask patterning process for fin-like field effect transistor (FinFET) device") by De et al. and US Patent No. 9576814 ("Method of spacer patterning to form a target integrated circuit pattern") by Wu et al. demonstrate the continuous refinement of FinFET fabrication techniques, enabling improved performance and reduced power consumption.

• US Patent No. 8841777 ("Bonded structure employing metal semiconductor alloy bonding") by Farooq et al. highlights the development of novel materials and fabrication techniques for creating advanced electronic and optoelectronic devices.

• US Patent No. 11318213 ("Compositions and methods for delivery of RNA") by Khandhar et al., US Patent No. 11376335 ("RNA-lipid nanoparticle complexes of viral RNA polymerase region and SARS-CoV-2 spike protein region") by Khandhar et al., US Patent No. 11458209 ("Compositions and methods for delivery of nucleic acid-lipid nanoparticle complexes encoding for viral RNA polymerase region and protein antigen") by Khandhar et al., and US Patent No. 11534497 ("Compositions and methods for delivery of RNA") by Khandhar et al. demonstrate the growing importance of nanotechnology-enabled drug delivery systems, such as lipid nanoparticles, for advancing medicine and biotechnology.

Note: This article is based on the provided list of patents and may not be exhaustive.

#Nanotechnology #Microelectronics #Semiconductors #Biotechnology #Medicine #MaterialsScience #Innovation #IPStrategy #PatentAnalysis #TechnologyLaw #IntellectualProperty

References:
Raw data from: U.S. Patent and Trademark Office. "Data Download Tables." PatentsView. Accessed September 7, 2024. https://patentsview.org/download/data-download-tables.

Please contact me (carlos@candeloro.net) for methodology, or if you know or believe information presented is not correct.